FDH055N15A mosfet equivalent, mosfet.
* RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low RDS(on).
* Synchronous Rectification for ATX / Sever / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Un.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
* Synchronous Rectification .
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